☑ Diode Reverse Bias Equation

A pn junction diode allows electric charges to flow in one direction but not in the opposite direction. The above are some of the parameters of the p n junction diode.

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Reverse breakdown voltage the basic minimum voltage applied to the diode when it is in reverse bias so that the behavior of the diode will change from insulator to conductor for some period of time is defined as the reverse breakdown voltage.

Diode reverse bias equation. The forward bias and the reverse bias properties of the pn junction imply that it can be used as a diode. Think of a voltage divider circuit if vd 0 forward bias the potential barrier to carrier diffusion is reduced by the applied voltage. Under reverse bias voltages the exponential in the diode equation is negligible and the current is a constant negative reverse current value of i s.

B current flow is prohibited. The corresponding applied voltage is referred to as the breakdown voltage. The maximum reverse bias voltage that can be applied to a p n diode is limited by breakdown.

I0 if valt0isate qvakt if va0 2 for reverse bias as we said the current is essentially nil. Diode is non linear component of an electrical circuit which allow current in forward biasing and block current in reverse biasing. The diode is reversed biased.

The diode current can be expressed in the form of diode current equation. Thus when an external voltage vdis applied across the diode almost all of this voltage is dropped across the depletion region. The drop of the quasi fermi level of holes from the level of the applied voltage at the p terminal to its value at the point where doping is.

Now lets simplify the previous expression further separately examining the cases when the junction diode is in forward bias ie vnv dt and reverse bias. In the forward bias case the exponential term quickly gets. The reverse breakdown region is not modeled by the shockley diode equation.

Negative charges electrons can easily flow through the junction from n to p but not from p to n and the reverse is true for holes. When the polarity of the battery is such that current is allowed to flow through the diode the diode is said to be forward biased. The behavior of a diode can be identified using vi characteristic.

Conversely when the battery is backward and the diode blocks current the diode is said to be reverse biased. Breakdown is characterized by the rapid increase of the current under reverse bias. To derive his equation for the voltage shockley argues that the total voltage drop can be divided into three parts.

Current of the diode depends upon the voltage across the diode. The difference between the quasi fermi. In other words the above equation is a very accurate description of the junction diode behaviorwith the important exception of when the junction diode is in breakdown.

The diode equation is usually approximated by two somewhat simpler equations depending upon whether the diode is forward or reverse biased.